High photoresponsivity germanium nanodot PhotoMOSFETs for monolithically-integrated Si optical interconnects

Ming Hao Kuo; Morris M. Lee; Pei-Wen Li

doi:10.1109/EDTM.2017.7947595

High photoresponsivity germanium nanodot PhotoMOSFETs for monolithically-integrated Si optical interconnects

Ming Hao Kuo, Morris M. Lee, Pei-Wen Li

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We presented a self-organized, MOS gate-stacking structure of SiO₂/Ge-dot/SiO₂/Si_1-xGe_x-shell, using thermal oxidation of poly-Si_0.85Ge_0.15 nanopillars over buffer Si₃N₄ on the Si substrate, for the fabrication of high performance Ge-dot photo MOSFETs. Low dark current of 3 μA/μm², Superior high photo responsivity of 1400-710A/W, and short response time of <0.8ns are measured on 90nm Ge-dot photo MOSFETs with W/L = 70μm/3μm under 850nm-1550nm illumination, providing a practically-achievable, core building block for monolithically-integrated Si optical interconnects.

Original language	English
Title of host publication	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	189-190
Number of pages	2
ISBN (Electronic)	9781509046591
DOIs	https://doi.org/10.1109/EDTM.2017.7947595
State	Published - 13 Jun 2017
Event	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan Duration: 28 Feb 2017 → 2 Mar 2017

Publication series

Name	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Conference

Conference	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country	Japan
City	Toyama
Period	28/02/17 → 2/03/17

Keywords

Ge-dot
optical interconnects
phototransistor

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Kuo, M. H., Lee, M. M., & Li, P-W. (2017). High photoresponsivity germanium nanodot PhotoMOSFETs for monolithically-integrated Si optical interconnects. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 189-190). [7947595] (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947595

Kuo, Ming Hao ; Lee, Morris M. ; Li, Pei-Wen. / High photoresponsivity germanium nanodot PhotoMOSFETs for monolithically-integrated Si optical interconnects. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 189-190 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

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title = "High photoresponsivity germanium nanodot PhotoMOSFETs for monolithically-integrated Si optical interconnects",

abstract = "We presented a self-organized, MOS gate-stacking structure of SiO2/Ge-dot/SiO2/Si1-xGex-shell, using thermal oxidation of poly-Si0.85Ge0.15 nanopillars over buffer Si3N4 on the Si substrate, for the fabrication of high performance Ge-dot photo MOSFETs. Low dark current of 3 μA/μm2, Superior high photo responsivity of 1400-710A/W, and short response time of <0.8ns are measured on 90nm Ge-dot photo MOSFETs with W/L = 70μm/3μm under 850nm-1550nm illumination, providing a practically-achievable, core building block for monolithically-integrated Si optical interconnects.",

keywords = "Ge-dot, optical interconnects, phototransistor",

author = "Kuo, {Ming Hao} and Lee, {Morris M.} and Pei-Wen Li",

year = "2017",

month = jun,

day = "13",

doi = "10.1109/EDTM.2017.7947595",

language = "English",

series = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "189--190",

booktitle = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",

address = "United States",

note = "null ; Conference date: 28-02-2017 Through 02-03-2017",

}

Kuo, MH, Lee, MM & Li, P-W 2017, High photoresponsivity germanium nanodot PhotoMOSFETs for monolithically-integrated Si optical interconnects. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947595, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 189-190, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 28/02/17. https://doi.org/10.1109/EDTM.2017.7947595

High photoresponsivity germanium nanodot PhotoMOSFETs for monolithically-integrated Si optical interconnects. / Kuo, Ming Hao; Lee, Morris M.; Li, Pei-Wen.

2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 189-190 7947595 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High photoresponsivity germanium nanodot PhotoMOSFETs for monolithically-integrated Si optical interconnects

AU - Kuo, Ming Hao

AU - Lee, Morris M.

AU - Li, Pei-Wen

PY - 2017/6/13

Y1 - 2017/6/13

N2 - We presented a self-organized, MOS gate-stacking structure of SiO2/Ge-dot/SiO2/Si1-xGex-shell, using thermal oxidation of poly-Si0.85Ge0.15 nanopillars over buffer Si3N4 on the Si substrate, for the fabrication of high performance Ge-dot photo MOSFETs. Low dark current of 3 μA/μm2, Superior high photo responsivity of 1400-710A/W, and short response time of <0.8ns are measured on 90nm Ge-dot photo MOSFETs with W/L = 70μm/3μm under 850nm-1550nm illumination, providing a practically-achievable, core building block for monolithically-integrated Si optical interconnects.

AB - We presented a self-organized, MOS gate-stacking structure of SiO2/Ge-dot/SiO2/Si1-xGex-shell, using thermal oxidation of poly-Si0.85Ge0.15 nanopillars over buffer Si3N4 on the Si substrate, for the fabrication of high performance Ge-dot photo MOSFETs. Low dark current of 3 μA/μm2, Superior high photo responsivity of 1400-710A/W, and short response time of <0.8ns are measured on 90nm Ge-dot photo MOSFETs with W/L = 70μm/3μm under 850nm-1550nm illumination, providing a practically-achievable, core building block for monolithically-integrated Si optical interconnects.

KW - Ge-dot

KW - optical interconnects

KW - phototransistor

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DO - 10.1109/EDTM.2017.7947595

M3 - Conference contribution

AN - SCOPUS:85021981534

T3 - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

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BT - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 28 February 2017 through 2 March 2017

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Kuo MH, Lee MM, Li P-W. High photoresponsivity germanium nanodot PhotoMOSFETs for monolithically-integrated Si optical interconnects. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 189-190. 7947595. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). https://doi.org/10.1109/EDTM.2017.7947595

High photoresponsivity germanium nanodot PhotoMOSFETs for monolithically-integrated Si optical interconnects

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