High photoresponsivity germanium nanodot PhotoMOSFETs for monolithically-integrated Si optical interconnects

Ming Hao Kuo, Morris M. Lee, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We presented a self-organized, MOS gate-stacking structure of SiO2/Ge-dot/SiO2/Si1-xGex-shell, using thermal oxidation of poly-Si0.85Ge0.15 nanopillars over buffer Si3N4 on the Si substrate, for the fabrication of high performance Ge-dot photo MOSFETs. Low dark current of 3 μA/μm2, Superior high photo responsivity of 1400-710A/W, and short response time of <0.8ns are measured on 90nm Ge-dot photo MOSFETs with W/L = 70μm/3μm under 850nm-1550nm illumination, providing a practically-achievable, core building block for monolithically-integrated Si optical interconnects.

Original languageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages189-190
Number of pages2
ISBN (Electronic)9781509046591
DOIs
StatePublished - 13 Jun 2017
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: 28 Feb 20172 Mar 2017

Publication series

Name2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Conference

Conference2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period28/02/172/03/17

Keywords

  • Ge-dot
  • optical interconnects
  • phototransistor

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