High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices

Yu Sheng Chiu, Jen Ting Liao, Yueh Chin Lin, Shin Chien Liu, Tai Ming Lin, Hiroshi Iwai, Kuniyuki Kakushima, Edward Yi Chang

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

High-κ cerium oxide (CeO2) was applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a gate insulator and a passivation layer by molecular beam deposition (MBD) for high-power applications. From capacitance-voltage (C-V) measurement results, the dielectric constant of the CeO2 film was 25.2. The C-V curves showed clear accumulation and depletion behaviors with a small hysteresis (20 mV). Moreover, the interface trap density (Dit) was calculated to be 5.5 × 1011 eV-1 cm-2 at 150 °C. A CeO2 MOS-HEMT was fabricated and demonstrated a low subthreshold swing (SS) of 87mV/decade, a high ON/OFF drain current ratio (ION/IOFF) of 1.14 × 109, and a low gate leakage current density (Jleakage) of 2.85 × 10-9Acm-2 with an improved dynamic ON-resistance (RON), which is about one order of magnitude lower than that of a conventional HEMT.

Original languageEnglish
Article number51001
JournalJapanese Journal of Applied Physics
Volume55
Issue number5
DOIs
StatePublished - 1 May 2016

Fingerprint Dive into the research topics of 'High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices'. Together they form a unique fingerprint.

  • Cite this