High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al2O3 passivation

Che Yu Liu, Chia Yen Huang, Pei Yu Wu, Jhih Kai Huang, Tsung-Sheng Kao, An Je Zhou, Da Wei Lin, Yew-Chuhg Wu, Chun Yen Chang, Hao-Chung Kuo

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

This letter developed the high-performance GaN-based light-emitting diodes (LEDs) for ultraviolet (UV) light emission at 385 nm with the light output power enhanced by up to 52% compared with that of the conventional UV-LEDs. The high-power-efficiency UV-LEDs include sidewall-passivated Al2O3 dielectric nanoscale air voids, which were created using the atomic layer deposition method and act as intermediate media for improving the internal quantum efficiency, reducing threading dislocation, and relaxing strain. The fabricated air void nanostructure also enhanced the light extraction efficiency by ∼32.7%, resulting in a high-power UV light-emitting device.

Original languageEnglish
Article number7419236
Pages (from-to)452-455
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number4
DOIs
StatePublished - 1 Apr 2016

Keywords

  • Light-emitting diodes
  • Nanotechnology
  • Optoelectronic devices

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