High Performance Transparent a-IGZO Thin Film Transistors with ALD-HfO2Gate Insulator on Colorless Polyimide Substrate

Min Chin Yu, Dun Bao Ruan, Po-Tsun Liu*, Ta Chun Chien, Yu Chuan Chiu, Kai Jhih Gan, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

High performance and transparent amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFT) have been successfully fabricated on the colorless polyimide plastic substrate using a high quality HfO2 dielectric film formed by the low temperature atomic layer deposition process as the gate insulator. Besides, the effects of source/drain material, ITO film and Mo metal, are also studied and compared in this work. With the optimized process condition, the devices with ITO source/drain exhibit a high ION/IOFF current ratio of ∼4.25 × 1011, a lower sub-threshold swing value of 0.087 V/decade, a desirable positive threshold voltage value of 0.1379 V and an acceptable field effect mobility of 19.69 cm2/Vs. while it also shows excellent reliability characteristic and low hysteresis. These results may appear highly promising potentials for the next generation fully transparent flexible display application.

Original languageEnglish
Article number9127827
Pages (from-to)481-485
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume19
DOIs
StatePublished - 29 Jun 2020

Keywords

  • colorless polyimide substrate
  • high-k
  • Indium-gallium-zinc-oxide
  • source-drain effect
  • thin-film transistors

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