High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization

Chun Chien Tsai*, Yao Jen Lee, Jyh Liang Wang, Kai Fang Wei, I. Che Lee, Chih Chung Chen, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

In this work, high-performance low-temperature poly-silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral grain growth have been demonstrated by excimer laser crystallization (ELC). Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current-voltage characteristics as compared with the conventional solid-phase crystallized (SPC) poly-Si double-gate TFTs or conventional ELC top-gate (TG) TFTs. The proposed ELC DG TFTs (W/L = 1.5/1.5 μm) had the field-effect-mobility exceeding 400 cm2/V s, on/off current ratio higher than 108, superior short-channel characteristics and higher current drivability.

Original languageEnglish
Pages (from-to)365-371
Number of pages7
JournalSolid-State Electronics
Volume52
Issue number3
DOIs
StatePublished - 1 Mar 2008

Keywords

  • Double-gate
  • Excimer laser crystallization
  • Thin film transistor (TFT)

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