High-performance superthin oxide/nitride/oxide stacked dielectrics formed by low-pressure oxidation of ultrathin nitride

Han Wen Liu, Huan Ping Su, Huang-Chung Cheng

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

High-performance superthin oxide/nitride/oxide (O/N/O) stacked dielectrics have been successfully achieved by oxidizing ultrathin nitride films in low-pressure dry oxygen at 850 °C for 30 min. The low leakage current andthe high reliability of this O/N/O structure are attributed to the growth of the top oxide on the nitride, which isconfirmed by Auger electron spectroscopy (AES) depth profiles and step-by-step diluted-HF etching results. Thecommonly used wet oxidation of the nitrides at atmospheric pressure cannot attain an effective oxide thickness ofas low as 46 Å. Furthermore, the dry oxidation of nitrides at atmospheric pressure can only yield a nitride/oxide(N/O) structure, which results in high leakage current. Therefore, our novel technique is promising for futuredynamic-random-access-memory (DRAM) technology.

Original languageEnglish
Pages (from-to)1713-1715
Number of pages3
JournalJapanese Journal of Applied Physics
Volume34
Issue number4R
DOIs
StatePublished - 1 Jan 1995

Keywords

  • Effective oxide thickness
  • Low-pressure oxidation
  • Oxide/nitride/oxide
  • Ultrathin nitride film

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