High-Performance Sub-Quarter-Micrometer PMOSFET’s on SOI

Fariborz Assaderaghi; Stephen Parke; Joe King; Ping Keung Ko; Chen-Ming Hu; Jian Chen

doi:10.1109/55.215204

High-Performance Sub-Quarter-Micrometer PMOSFET’s on SOI

Fariborz Assaderaghi, Stephen Parke, Joe King, Ping Keung Ko, Chen-Ming Hu, Jian Chen

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

PMOS transistors with effective channel lengths down to 0.15 um have been fabricated on silicon-on-insulator (SOI) films. Gate oxide thicknesses of 5.5 and 10 nm are used. These P⁺ gate PMOS devices exhibit excellent short-channel behavior, low source-drain resistance, and remarkably large current drive and transconductance. For T_ox- 5.5 nm, saturation transconductances of 274 mS/mm at 300 K and 352 mS/mm at 80 K are achieved, which are the highest reported values for this oxide thickness. The result is attributed to low series resistance, forward-bias body effect, and the reduction of body charge effect.

Original language	English
Pages (from-to)	298-300
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1109/55.215204
State	Published - 1 Jan 1993

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@article{89fb247c14344b55b3d944bd63293ac7,

title = "High-Performance Sub-Quarter-Micrometer PMOSFET{\textquoteright}s on SOI",

abstract = "PMOS transistors with effective channel lengths down to 0.15 um have been fabricated on silicon-on-insulator (SOI) films. Gate oxide thicknesses of 5.5 and 10 nm are used. These P+ gate PMOS devices exhibit excellent short-channel behavior, low source-drain resistance, and remarkably large current drive and transconductance. For Tox- 5.5 nm, saturation transconductances of 274 mS/mm at 300 K and 352 mS/mm at 80 K are achieved, which are the highest reported values for this oxide thickness. The result is attributed to low series resistance, forward-bias body effect, and the reduction of body charge effect.",

author = "Fariborz Assaderaghi and Stephen Parke and Joe King and Ko, {Ping Keung} and Chen-Ming Hu and Jian Chen",

year = "1993",

month = jan,

day = "1",

doi = "10.1109/55.215204",

language = "English",

volume = "14",

pages = "298--300",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - High-Performance Sub-Quarter-Micrometer PMOSFET’s on SOI

AU - Assaderaghi, Fariborz

AU - Parke, Stephen

AU - King, Joe

AU - Ko, Ping Keung

AU - Hu, Chen-Ming

AU - Chen, Jian

PY - 1993/1/1

Y1 - 1993/1/1

N2 - PMOS transistors with effective channel lengths down to 0.15 um have been fabricated on silicon-on-insulator (SOI) films. Gate oxide thicknesses of 5.5 and 10 nm are used. These P+ gate PMOS devices exhibit excellent short-channel behavior, low source-drain resistance, and remarkably large current drive and transconductance. For Tox- 5.5 nm, saturation transconductances of 274 mS/mm at 300 K and 352 mS/mm at 80 K are achieved, which are the highest reported values for this oxide thickness. The result is attributed to low series resistance, forward-bias body effect, and the reduction of body charge effect.

AB - PMOS transistors with effective channel lengths down to 0.15 um have been fabricated on silicon-on-insulator (SOI) films. Gate oxide thicknesses of 5.5 and 10 nm are used. These P+ gate PMOS devices exhibit excellent short-channel behavior, low source-drain resistance, and remarkably large current drive and transconductance. For Tox- 5.5 nm, saturation transconductances of 274 mS/mm at 300 K and 352 mS/mm at 80 K are achieved, which are the highest reported values for this oxide thickness. The result is attributed to low series resistance, forward-bias body effect, and the reduction of body charge effect.

UR - http://www.scopus.com/inward/record.url?scp=0027606462&partnerID=8YFLogxK

U2 - 10.1109/55.215204

DO - 10.1109/55.215204

M3 - Article

AN - SCOPUS:0027606462

VL - 14

SP - 298

EP - 300

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

ER -