High-Performance Sub-Quarter-Micrometer PMOSFET’s on SOI

Fariborz Assaderaghi, Stephen Parke, Joe King, Ping Keung Ko, Chen-Ming Hu, Jian Chen

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


PMOS transistors with effective channel lengths down to 0.15 um have been fabricated on silicon-on-insulator (SOI) films. Gate oxide thicknesses of 5.5 and 10 nm are used. These P+ gate PMOS devices exhibit excellent short-channel behavior, low source-drain resistance, and remarkably large current drive and transconductance. For Tox- 5.5 nm, saturation transconductances of 274 mS/mm at 300 K and 352 mS/mm at 80 K are achieved, which are the highest reported values for this oxide thickness. The result is attributed to low series resistance, forward-bias body effect, and the reduction of body charge effect.

Original languageEnglish
Pages (from-to)298-300
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - 1 Jan 1993

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