High-performance SrTiO 3 MIM capacitors for analog applications

K. C. Chiang*, Ching Chien Huang, G. L. Chen, Wen Jauh Chen, H. L. Kao, Yung Hsien Wu, Albert Chin, Sean P. McAlister

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

88 Scopus citations

Abstract

TaN/SrTiO 3 /TaN capacitors with a capacitance density of 28-35 fF/μm 2 have been developed by using a high-κ (κ = 147-169) SrTiO 3 dielectric containing nanometer-sized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N + treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V 2 ) voltage coefficient of the capacitance and the 3 × 10 -8 A/cm 2 leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.

Original languageEnglish
Pages (from-to)2312-2318
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume53
Issue number9
DOIs
StatePublished - 1 Sep 2006

Keywords

  • Capacitor
  • International technology roadmap for semiconductors (ITRS)
  • Metal-insulator-metal (MIM)
  • SrTiO (STO)

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