TaN/SrTiO 3 /TaN capacitors with a capacitance density of 28-35 fF/μm 2 have been developed by using a high-κ (κ = 147-169) SrTiO 3 dielectric containing nanometer-sized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N + treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V 2 ) voltage coefficient of the capacitance and the 3 × 10 -8 A/cm 2 leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.
- International technology roadmap for semiconductors (ITRS)
- Metal-insulator-metal (MIM)
- SrTiO (STO)