High-performance solution-processed amorphous ZrInZnO thin-film transistors

Ya Wei Chung, Fang-Chung Chen*, Ying Ping Chen, Yu Ze Chen, Yu Lun Chueh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We have developed amorphous zirconium-indium-zinc-oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm 2 /Vs, an on-off ratio of ∼10 7 , a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin-film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase.

Original languageEnglish
Pages (from-to)400-402
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Issue number9-10
StatePublished - 30 Aug 2012


  • Amorphous thin films
  • Oxide semiconductors
  • Transistors
  • Zirconium

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