High-performance solution-processed amorphous ZrInZnO thin-film transistors

Ya Wei Chung; Fang-Chung Chen; Ying Ping Chen; Yu Ze Chen; Yu Lun Chueh

doi:10.1002/pssr.201206323

High-performance solution-processed amorphous ZrInZnO thin-film transistors

Ya Wei Chung, Fang-Chung Chen^*, Ying Ping Chen, Yu Ze Chen, Yu Lun Chueh

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have developed amorphous zirconium-indium-zinc-oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm ² /Vs, an on-off ratio of ∼10 ⁷ , a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin-film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase.

Original language	English
Pages (from-to)	400-402
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	6
Issue number	9-10
DOIs	https://doi.org/10.1002/pssr.201206323
State	Published - 30 Aug 2012

Keywords

Amorphous thin films
Oxide semiconductors
Transistors
Zirconium

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title = "High-performance solution-processed amorphous ZrInZnO thin-film transistors",

abstract = " We have developed amorphous zirconium-indium-zinc-oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm 2 /Vs, an on-off ratio of ∼10 7 , a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin-film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase.",

keywords = "Amorphous thin films, Oxide semiconductors, Transistors, Zirconium",

author = "Chung, {Ya Wei} and Fang-Chung Chen and Chen, {Ying Ping} and Chen, {Yu Ze} and Chueh, {Yu Lun}",

year = "2012",

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T1 - High-performance solution-processed amorphous ZrInZnO thin-film transistors

AU - Chung, Ya Wei

AU - Chen, Fang-Chung

AU - Chen, Ying Ping

AU - Chen, Yu Ze

AU - Chueh, Yu Lun

PY - 2012/8/30

Y1 - 2012/8/30

N2 - We have developed amorphous zirconium-indium-zinc-oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm 2 /Vs, an on-off ratio of ∼10 7 , a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin-film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase.

AB - We have developed amorphous zirconium-indium-zinc-oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm 2 /Vs, an on-off ratio of ∼10 7 , a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin-film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase.

KW - Amorphous thin films

KW - Oxide semiconductors

KW - Transistors

KW - Zirconium

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