High-Performance Single-Crystal-Like Strained-Silicon Nanowire Thin-Film Transistors via Continuous-Wave Laser Crystallization

Chia Hsin Chou, Wei Sheng Chan, I. Che Lee, Chao Lung Wang, Chun Yu Wu, Po Yu Yang, Chan Yu Liao, Kuang Yu Wang, Huang-Chung Cheng

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

High-performance polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs) have been demonstrated via continuous-wave laser crystallization (CLC) to exhibit the low subthreshold swing of 216 mV/decade and high ON/OFF ratio of 1.6 × 109. In addition, the thermal stress of ∼800 MPa induced from the CLC process also contributed to the single-crystal-like silicon NW CLC TFTs to achieve an excellent field-effect mobility of up to 900 cm2V-1s-1.

Original languageEnglish
Article number7045448
Pages (from-to)348-350
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number4
DOIs
StatePublished - 1 Apr 2015

Keywords

  • Continuous-wave laser crystallization (CLC)
  • nanowire (NW)
  • polycrystalline silicon (poly-Si)

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