High-performance polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs) have been demonstrated via continuous-wave laser crystallization (CLC) to exhibit the low subthreshold swing of 216 mV/decade and high ON/OFF ratio of 1.6 × 109. In addition, the thermal stress of ∼800 MPa induced from the CLC process also contributed to the single-crystal-like silicon NW CLC TFTs to achieve an excellent field-effect mobility of up to 900 cm2V-1s-1.
- Continuous-wave laser crystallization (CLC)
- nanowire (NW)
- polycrystalline silicon (poly-Si)