High-performance self-aligned bottom-gate low-temperature poly-silicon thin-film transistors with excimer laser crystallization

Chun Chien Tsai*, Hsu Hsin Chen, Bo Ting Chen, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

In this letter, high-performance bottom-gate (BG) low-temperature poly-silicon thin-film transistors (TFTs) with excimer laser crystallization have been demonstrated using self-aligned (SA) backside photolithography exposure. The grains with lateral grain size of about 0.75 μm could be artificially grown in the channel region via the super-lateral-growth phenomenon fabricated by excimer laser irradiation. Consequently, SA-BG TFTs with the channel length of 1 μm exhibited field-effect mobility reaching 193 cm2/V · s without hydrogenation, while the mobility of the conventional non-SA-BG TFT and conventional SA top-gate one were about 17.8 and 103 cm2V · s, respectively. Moreover, SA-BG TFTs showed higher device uniformity and wider process window owing to the homogenous lateral grains crystallized from the channel steps near the BG edges.

Original languageEnglish
Pages (from-to)599-602
Number of pages4
JournalIEEE Electron Device Letters
Volume28
Issue number7
DOIs
StatePublished - 1 Jul 2007

Keywords

  • Bottom gate (BG)
  • Excimer laser crystallization (ELC)
  • Lateral grain growth
  • Self-aligned (SA)
  • Thin-film transistor (TFT)

Fingerprint Dive into the research topics of 'High-performance self-aligned bottom-gate low-temperature poly-silicon thin-film transistors with excimer laser crystallization'. Together they form a unique fingerprint.

Cite this