High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process

Chung Chun Hsu, Yi He Tsai, Che Wei Chen, Jyun Han Li, Yu Hsien Lin, Yao Jen Lee, Guang Li Luo, Chao-Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (ΦBn) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 105 at the applied voltage of |Va|=1 V. Our quantum-well pMOSFET exhibited a high ION/IOFF ratio of ∼ 107(IS) and a moderate subthreshold swing of 166 mV/decade.

Original languageEnglish
Article number7331593
Pages (from-to)8-11
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number1
DOIs
StatePublished - 1 Jan 2016

Keywords

  • Microwave-activated annealing (MWA)
  • NiSiGe
  • PMOSFET
  • Schottky barrier height
  • quantum well (QW)

Fingerprint Dive into the research topics of 'High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process'. Together they form a unique fingerprint.

  • Cite this