High-performance RSD poly-Si TFTs with a new ONO gate dielectric

Kow-Ming Chang*, Wen Chih Yang, Bing Fang Hung

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

This paper developed a novel polycrystalline silicon (poly-Si) thin-film transistor (TFT) structure with the following special features: 1) a new oxide-nitride-oxynitride (ONO) multilayer gate dielectric to reduce leakage current, improved breakdown characteristics, and enhanced reliability; and 2) raised source/drain (RSD) structure to reduce series resistance. These features were used to fabricate high-performance RSD-TFTs with ONO gate dielectric. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time dependent dielectric breakdown, larger QBD, and a lower charge-trapping rate than single-layer plasma-enhanced chemical vapor deposition tetraethooxysilane oxide or nitride. The fabricated RSD-TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 320 cm2/V·s, and an on/off current ratio exceeding 108.

Original languageEnglish
Pages (from-to)995-1001
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume51
Issue number6
DOIs
StatePublished - 1 Jun 2004

Keywords

  • Gate dielectric
  • NO-plasma oxynitride
  • Oxide-nitride-oxide (ONO)
  • Raised source/drain (RSD)
  • Thin-film transistors (TFTs)

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