Abstract
This paper developed a novel polycrystalline silicon (poly-Si) thin-film transistor (TFT) structure with the following special features: 1) a new oxide-nitride-oxynitride (ONO) multilayer gate dielectric to reduce leakage current, improved breakdown characteristics, and enhanced reliability; and 2) raised source/drain (RSD) structure to reduce series resistance. These features were used to fabricate high-performance RSD-TFTs with ONO gate dielectric. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time dependent dielectric breakdown, larger QBD, and a lower charge-trapping rate than single-layer plasma-enhanced chemical vapor deposition tetraethooxysilane oxide or nitride. The fabricated RSD-TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 320 cm2/V·s, and an on/off current ratio exceeding 108.
Original language | English |
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Pages (from-to) | 995-1001 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 51 |
Issue number | 6 |
DOIs | |
State | Published - 1 Jun 2004 |
Keywords
- Gate dielectric
- NO-plasma oxynitride
- Oxide-nitride-oxide (ONO)
- Raised source/drain (RSD)
- Thin-film transistors (TFTs)