High-performance RSD poly-Si TFTs with a new ONO gate dielectric

Kow-Ming Chang; Wen Chih Yang; Bing Fang Hung

doi:10.1109/TED.2004.827382

High-performance RSD poly-Si TFTs with a new ONO gate dielectric

Kow-Ming Chang^*, Wen Chih Yang, Bing Fang Hung

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This paper developed a novel polycrystalline silicon (poly-Si) thin-film transistor (TFT) structure with the following special features: 1) a new oxide-nitride-oxynitride (ONO) multilayer gate dielectric to reduce leakage current, improved breakdown characteristics, and enhanced reliability; and 2) raised source/drain (RSD) structure to reduce series resistance. These features were used to fabricate high-performance RSD-TFTs with ONO gate dielectric. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time dependent dielectric breakdown, larger Q_BD, and a lower charge-trapping rate than single-layer plasma-enhanced chemical vapor deposition tetraethooxysilane oxide or nitride. The fabricated RSD-TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 320 cm²/V·s, and an on/off current ratio exceeding 10⁸.

Original language	English
Pages (from-to)	995-1001
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	6
DOIs	https://doi.org/10.1109/TED.2004.827382
State	Published - 1 Jun 2004

Keywords

Gate dielectric
NO-plasma oxynitride
Oxide-nitride-oxide (ONO)
Raised source/drain (RSD)
Thin-film transistors (TFTs)

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title = "High-performance RSD poly-Si TFTs with a new ONO gate dielectric",

abstract = "This paper developed a novel polycrystalline silicon (poly-Si) thin-film transistor (TFT) structure with the following special features: 1) a new oxide-nitride-oxynitride (ONO) multilayer gate dielectric to reduce leakage current, improved breakdown characteristics, and enhanced reliability; and 2) raised source/drain (RSD) structure to reduce series resistance. These features were used to fabricate high-performance RSD-TFTs with ONO gate dielectric. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time dependent dielectric breakdown, larger QBD, and a lower charge-trapping rate than single-layer plasma-enhanced chemical vapor deposition tetraethooxysilane oxide or nitride. The fabricated RSD-TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 320 cm2/V·s, and an on/off current ratio exceeding 108.",

keywords = "Gate dielectric, NO-plasma oxynitride, Oxide-nitride-oxide (ONO), Raised source/drain (RSD), Thin-film transistors (TFTs)",

author = "Kow-Ming Chang and Yang, {Wen Chih} and Hung, {Bing Fang}",

year = "2004",

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doi = "10.1109/TED.2004.827382",

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T1 - High-performance RSD poly-Si TFTs with a new ONO gate dielectric

AU - Chang, Kow-Ming

AU - Yang, Wen Chih

AU - Hung, Bing Fang

PY - 2004/6/1

Y1 - 2004/6/1

N2 - This paper developed a novel polycrystalline silicon (poly-Si) thin-film transistor (TFT) structure with the following special features: 1) a new oxide-nitride-oxynitride (ONO) multilayer gate dielectric to reduce leakage current, improved breakdown characteristics, and enhanced reliability; and 2) raised source/drain (RSD) structure to reduce series resistance. These features were used to fabricate high-performance RSD-TFTs with ONO gate dielectric. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time dependent dielectric breakdown, larger QBD, and a lower charge-trapping rate than single-layer plasma-enhanced chemical vapor deposition tetraethooxysilane oxide or nitride. The fabricated RSD-TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 320 cm2/V·s, and an on/off current ratio exceeding 108.

AB - This paper developed a novel polycrystalline silicon (poly-Si) thin-film transistor (TFT) structure with the following special features: 1) a new oxide-nitride-oxynitride (ONO) multilayer gate dielectric to reduce leakage current, improved breakdown characteristics, and enhanced reliability; and 2) raised source/drain (RSD) structure to reduce series resistance. These features were used to fabricate high-performance RSD-TFTs with ONO gate dielectric. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time dependent dielectric breakdown, larger QBD, and a lower charge-trapping rate than single-layer plasma-enhanced chemical vapor deposition tetraethooxysilane oxide or nitride. The fabricated RSD-TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 320 cm2/V·s, and an on/off current ratio exceeding 108.

KW - Gate dielectric

KW - NO-plasma oxynitride

KW - Oxide-nitride-oxide (ONO)

KW - Raised source/drain (RSD)

KW - Thin-film transistors (TFTs)

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U2 - 10.1109/TED.2004.827382

DO - 10.1109/TED.2004.827382

M3 - Article

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VL - 51

SP - 995

EP - 1001

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

SN - 0018-9383

IS - 6

ER -

High-performance RSD poly-Si TFTs with a new ONO gate dielectric

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Keywords

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