High-performance ridge-waveguide multi-stack (N = 2, 5 and 10) InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range

Kuo-Jui Lin*, I. F. Chen, F. J. Lay, J. Y. Chi, D. A. Livshits, A. R. Kovsh, V. M. Ustinov

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We have investigated light-current and spectral characteristics of 2-, 5- and 10-stack InAs/InGaAs/GaAs quantum dot (QD) ridge-waveguide lasers grown by MBE. Ultra-low threshold current of 1.43 mA was achieved for 2-stack QD laser. Simultaneous lasing at ground- and excited-states was observed. This effect is accounted for the finite time of carriers capture to the ground-state in QDs. Multi-stack QD structures enables to maintain continuous-wave (CW) ground-state lasing up to the current density of 100 × Jth and to achieve the highest output power and efficiency ever recorded for any single-mode lasers of 1.3-μm-wavelength range.

Original languageEnglish
Pages (from-to)187-192
Number of pages6
JournalInternational Journal of Nanoscience
Volume3
Issue number1-2
DOIs
StatePublished - 1 Feb 2004

Keywords

  • Gain saturation
  • Ground-state lasing
  • Quantum dot laser

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