High-performance resistive switching characteristics of programmable metallization cell with oxidized Cu-Ti electrodes

Yu-Chih Huang, Chia Hsin Chou, Chan Yu Liao, Wan Lin Tsai, Huang-Chung Cheng

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Programmable metallization cell (PMC) memory devices with oxidized Cu-Ti alloy films as the bottom electrodes have been shown to exhibit a superior on/off state current ratio (memory window) of as high as 103 and endurance of 3000 cycles as compared to conventional pure copper and unoxidized Cu-Ti alloy electrodes. It was conjectured that the Cu-Ti alloy electrodes could obtain the appropriate amount of copper atoms to format and rupture the conductive filaments in the resistive switching layer. Furthermore, the oxidized Cu-Ti alloys could control the Cu cations from the Cu and Cu2O to the appropriate amountto achieve the most favorable PMC characteristics.

Original languageEnglish
Article number142905
JournalApplied Physics Letters
Volume103
Issue number14
DOIs
StatePublished - 21 Oct 2013

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