Abstract
This letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with the recessed-channel (RC) structure for high-performance p-channel Ge thin-film transistors (TFTs). Using ELC, large longitudinal grains with a single perpendicular grain boundary (GB) in the center of the recessed region were formed. This can be attributed to the lateral grain growth from un-melted Ge solid seeds in the thick region toward the complete melting recessed region during ELC. Consequently, the proposed p-channel RC-ELC Ge TFTs possessing large longitudinal grains without the perpendicular GB in the channel region exhibited a superior field-effect hole mobility of 447 cm2V-1s-1 with minor performance deviation.
Original language | English |
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Pages (from-to) | 367-370 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 39 |
Issue number | 3 |
DOIs | |
State | Published - 1 Mar 2018 |
Keywords
- excimer laser crystallization (ELC)
- Germanium (Ge)
- location-controlled grain boundary (LCGB)
- thin-film transistor (TFT)