High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

Chan Yu Liao; Shih Hung Chen; Wen Hsien Huang; Chang Hong Shen; Jia Min Shieh; Huang-Chung Cheng

doi:10.1109/LED.2018.2791506

High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

Chan Yu Liao^*, Shih Hung Chen, Wen Hsien Huang, Chang Hong Shen, Jia Min Shieh, Huang-Chung Cheng

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with the recessed-channel (RC) structure for high-performance p-channel Ge thin-film transistors (TFTs). Using ELC, large longitudinal grains with a single perpendicular grain boundary (GB) in the center of the recessed region were formed. This can be attributed to the lateral grain growth from un-melted Ge solid seeds in the thick region toward the complete melting recessed region during ELC. Consequently, the proposed p-channel RC-ELC Ge TFTs possessing large longitudinal grains without the perpendicular GB in the channel region exhibited a superior field-effect hole mobility of 447 cm²V^-1s^-1 with minor performance deviation.

Original language	English
Pages (from-to)	367-370
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	3
DOIs	https://doi.org/10.1109/LED.2018.2791506
State	Published - 1 Mar 2018

Keywords

excimer laser crystallization (ELC)
Germanium (Ge)
location-controlled grain boundary (LCGB)
thin-film transistor (TFT)

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10.1109/LED.2018.2791506

Link to publication in Scopus

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title = "High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization",

abstract = "This letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with the recessed-channel (RC) structure for high-performance p-channel Ge thin-film transistors (TFTs). Using ELC, large longitudinal grains with a single perpendicular grain boundary (GB) in the center of the recessed region were formed. This can be attributed to the lateral grain growth from un-melted Ge solid seeds in the thick region toward the complete melting recessed region during ELC. Consequently, the proposed p-channel RC-ELC Ge TFTs possessing large longitudinal grains without the perpendicular GB in the channel region exhibited a superior field-effect hole mobility of 447 cm2V-1s-1 with minor performance deviation.",

keywords = "excimer laser crystallization (ELC), Germanium (Ge), location-controlled grain boundary (LCGB), thin-film transistor (TFT)",

author = "Liao, {Chan Yu} and Chen, {Shih Hung} and Huang, {Wen Hsien} and Shen, {Chang Hong} and Shieh, {Jia Min} and Huang-Chung Cheng",

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AU - Liao, Chan Yu

AU - Chen, Shih Hung

AU - Huang, Wen Hsien

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Cheng, Huang-Chung

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AB - This letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with the recessed-channel (RC) structure for high-performance p-channel Ge thin-film transistors (TFTs). Using ELC, large longitudinal grains with a single perpendicular grain boundary (GB) in the center of the recessed region were formed. This can be attributed to the lateral grain growth from un-melted Ge solid seeds in the thick region toward the complete melting recessed region during ELC. Consequently, the proposed p-channel RC-ELC Ge TFTs possessing large longitudinal grains without the perpendicular GB in the channel region exhibited a superior field-effect hole mobility of 447 cm2V-1s-1 with minor performance deviation.

KW - excimer laser crystallization (ELC)

KW - Germanium (Ge)

KW - location-controlled grain boundary (LCGB)

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