High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

Chan Yu Liao*, Shih Hung Chen, Wen Hsien Huang, Chang Hong Shen, Jia Min Shieh, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


This letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with the recessed-channel (RC) structure for high-performance p-channel Ge thin-film transistors (TFTs). Using ELC, large longitudinal grains with a single perpendicular grain boundary (GB) in the center of the recessed region were formed. This can be attributed to the lateral grain growth from un-melted Ge solid seeds in the thick region toward the complete melting recessed region during ELC. Consequently, the proposed p-channel RC-ELC Ge TFTs possessing large longitudinal grains without the perpendicular GB in the channel region exhibited a superior field-effect hole mobility of 447 cm2V-1s-1 with minor performance deviation.

Original languageEnglish
Pages (from-to)367-370
Number of pages4
JournalIEEE Electron Device Letters
Issue number3
StatePublished - 1 Mar 2018


  • excimer laser crystallization (ELC)
  • Germanium (Ge)
  • location-controlled grain boundary (LCGB)
  • thin-film transistor (TFT)

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