High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

Chan Yu Liao; Shih Hung Chen; Wen Hsien Huang; Chang Hong Shen; Jia Min Shieh; Huang-Chung Cheng

doi:10.1109/LED.2018.2791506

High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

Chan Yu Liao^*, Shih Hung Chen, Wen Hsien Huang, Chang Hong Shen, Jia Min Shieh, Huang-Chung Cheng

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

This letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with the recessed-channel (RC) structure for high-performance p-channel Ge thin-film transistors (TFTs). Using ELC, large longitudinal grains with a single perpendicular grain boundary (GB) in the center of the recessed region were formed. This can be attributed to the lateral grain growth from un-melted Ge solid seeds in the thick region toward the complete melting recessed region during ELC. Consequently, the proposed p-channel RC-ELC Ge TFTs possessing large longitudinal grains without the perpendicular GB in the channel region exhibited a superior field-effect hole mobility of 447 cm²V^-1s^-1 with minor performance deviation.

Original language	English
Pages (from-to)	367-370
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	3
DOIs	https://doi.org/10.1109/LED.2018.2791506
State	Published - 1 Mar 2018

Keywords

excimer laser crystallization (ELC)
Germanium (Ge)
location-controlled grain boundary (LCGB)
thin-film transistor (TFT)

Access to Document

10.1109/LED.2018.2791506

Fingerprint Dive into the research topics of 'High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization'. Together they form a unique fingerprint.

Cite this

@article{2145954568814ff592ebc5601e7894a3,

title = "High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization",

abstract = "This letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with the recessed-channel (RC) structure for high-performance p-channel Ge thin-film transistors (TFTs). Using ELC, large longitudinal grains with a single perpendicular grain boundary (GB) in the center of the recessed region were formed. This can be attributed to the lateral grain growth from un-melted Ge solid seeds in the thick region toward the complete melting recessed region during ELC. Consequently, the proposed p-channel RC-ELC Ge TFTs possessing large longitudinal grains without the perpendicular GB in the channel region exhibited a superior field-effect hole mobility of 447 cm2V-1s-1 with minor performance deviation.",

keywords = "excimer laser crystallization (ELC), Germanium (Ge), location-controlled grain boundary (LCGB), thin-film transistor (TFT)",

author = "Liao, {Chan Yu} and Chen, {Shih Hung} and Huang, {Wen Hsien} and Shen, {Chang Hong} and Shieh, {Jia Min} and Huang-Chung Cheng",

year = "2018",

month = mar,

day = "1",

doi = "10.1109/LED.2018.2791506",

language = "English",

volume = "39",

pages = "367--370",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

AU - Liao, Chan Yu

AU - Chen, Shih Hung

AU - Huang, Wen Hsien

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Cheng, Huang-Chung

PY - 2018/3/1

Y1 - 2018/3/1

N2 - This letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with the recessed-channel (RC) structure for high-performance p-channel Ge thin-film transistors (TFTs). Using ELC, large longitudinal grains with a single perpendicular grain boundary (GB) in the center of the recessed region were formed. This can be attributed to the lateral grain growth from un-melted Ge solid seeds in the thick region toward the complete melting recessed region during ELC. Consequently, the proposed p-channel RC-ELC Ge TFTs possessing large longitudinal grains without the perpendicular GB in the channel region exhibited a superior field-effect hole mobility of 447 cm2V-1s-1 with minor performance deviation.

AB - This letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with the recessed-channel (RC) structure for high-performance p-channel Ge thin-film transistors (TFTs). Using ELC, large longitudinal grains with a single perpendicular grain boundary (GB) in the center of the recessed region were formed. This can be attributed to the lateral grain growth from un-melted Ge solid seeds in the thick region toward the complete melting recessed region during ELC. Consequently, the proposed p-channel RC-ELC Ge TFTs possessing large longitudinal grains without the perpendicular GB in the channel region exhibited a superior field-effect hole mobility of 447 cm2V-1s-1 with minor performance deviation.

KW - excimer laser crystallization (ELC)

KW - Germanium (Ge)

KW - location-controlled grain boundary (LCGB)

KW - thin-film transistor (TFT)

UR - http://www.scopus.com/inward/record.url?scp=85041209596&partnerID=8YFLogxK

U2 - 10.1109/LED.2018.2791506

DO - 10.1109/LED.2018.2791506

M3 - Article

AN - SCOPUS:85041209596

VL - 39

SP - 367

EP - 370

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 3

ER -

High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

Abstract

Keywords

Access to Document

Other files and links

Cite this