High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory

Chao-Hsin Chien*, Ding Yeong Wang, Ming Jui Yang, Peer Lehnen, Ching Chich Leu, Shiow Huey Chuang, Tiao Yuan Huang, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

23 Scopus citations

Abstract

Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 390-nm-thick SrBi2Ta2O9 (SBT) ferroelectric film and 8-nm-thick hafnium oxide (HfO2) layer on silicon substrate have been fabricated and characterized. It is demonstrated for the first time that the MFIS stack exhibits a large memory window of around 1.08 V at an operation voltage of 3.5 V. Moreover, the MFIS memory structure suffers only 18% degradation in the memory window after 109 switching cycles. The excellent performance is attributed to the formation of well-crystallized SBT perovskite thin film on top of the HfO2 buffer layer, as evidenced by the distinctive sharp peaks in X-ray diffraction (XRD) spectra. In addition to its relatively high κ value, HfO2 also serves as a good seed layer for SBT crystallization, making the proposed Pt/SrBi2Ta2O9/HfO2/Si structure ideally suitable for low-voltage and high-performance ferroelectric memories.

Original languageEnglish
Pages (from-to)553-555
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number9
DOIs
StatePublished - 1 Sep 2003

Keywords

  • Ferroelectric
  • Hafnium oxide
  • Memory window
  • Metal-ferroelectric-insulator-semiconductor (MFIS)
  • SrBiTaO

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