High-performance programmable metallization cell memory with the pyramid-structured electrode

Yu-Chih Huang, Wan Lin Tsai, Chia Hsin Chou, Chung Yun Wan, Ching Hsiao, Huang-Chung Cheng

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


The pyramid structure fabricated with the potassium hydroxide (KOH) anisotropically etched (100) silicon substrate has been deposited with a copper film as the bottom electrode of the programmable metallization cell (PMC) memory to significantly improve the resistive switching characteristic. As compared with the conventional flat copper electrode, this pyramid-structured electrode exhibited the set/reset voltage as low as 1/0.6 V and superior endurance of 2400 cycles at the set/reset voltages of-5/+3 V for the voltages pulse width of 1 mu\rm s. The high performance of this PMC could be attributed to high local electrical fields at the tipsof the pyramid structure, resulting in the formation of the narrower conductive filaments that facilitate the lower operation voltageand better endurance.

Original languageEnglish
Article number6578060
Pages (from-to)1244-1246
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - 19 Aug 2013


  • Potassium hydroxide (KOH) surface texturing
  • programmable metallization cell (PMC)
  • pyramid structure
  • resistive random-access memory (RRAM or ReRAM)

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