High-performance polyimide-based ReRAM for nonvolatile memory application

Sheng Hsien Liu*, Wen Luh Yang, Chi Chang Wu, Tien-Sheng Chao, Meng Ru Ye, Yu Yuan Su, Po Yang Wang, Ming Jui Tsai

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 105) and superior endurance (> 105 cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.

Original languageEnglish
Article number6365747
Pages (from-to)123-125
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number1
DOIs
StatePublished - 1 Jan 2013

Keywords

  • Polyimide (PI)
  • resistive random access memory (ReRAM) devices
  • sol-gel

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    Liu, S. H., Yang, W. L., Wu, C. C., Chao, T-S., Ye, M. R., Su, Y. Y., Wang, P. Y., & Tsai, M. J. (2013). High-performance polyimide-based ReRAM for nonvolatile memory application. IEEE Electron Device Letters, 34(1), 123-125. [6365747]. https://doi.org/10.1109/LED.2012.2224633