High-performance polycrystalline silicon thin-film transistors with oxide-nitride-oxide gate dielectric and multiple nanowire channels

Shih Ching Chen, Ting Chang Chang*, Po-Tsun Liu, Y. C. Wu, C. C. Tsai, T. S. Chang, Chen Hsin Lien

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This work presents a method to enhance the performance of polycrystalline silicon thin film transistors (poly-Si TFTs) by using an oxide-nitride-oxide (ONO) gate dielectric and the multiple nanowire channels structure. Experimental results indicate that the performance of the device was enhanced by using the ONO multilayer, because the ONO gate dielectric constant is increased compared to the conventional oxide gate dielectric. Additionally, the TFTs with a ten nanowire channel structure (NW-TFTs) have superior electrical characteristics compared to other TFTs. This is because a structure with more corners and a shorter radius has better gate control due to the corner effect.

Original languageEnglish
Pages (from-to)1112-1116
Number of pages5
JournalThin Solid Films
Volume515
Issue number3
DOIs
StatePublished - 23 Nov 2006

Keywords

  • Nanowire
  • Oxide-nitride-oxide
  • Poly-Si TFTs

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