High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure

Yung Chun Wu*, Ting Chang Chang, Chun Yen Chang, Chi Shen Chen, Chun Hao Tu, Po-Tsun Liu, Hsiao-Wen Zan, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

The high-performance polycrystalline silicon thin-film transistor (TFT) with light doped drain (LDD) structure and multiple nanowire channels (MNC) was analyzed. It was observed that the TFT with LDD structure exhibited low leakage currents since the lateral electrical field was reduced in the drain offset region. The MNC were found to generate defects in the polysilicon grin boundary, and had efficient NH3 plasma passivation. It was also observed that the MNC TFTs exhibited low leakage current in the off state, a high ON/OFF current ratio, and a low subthreshold slope.

Original languageEnglish
Pages (from-to)3822-3824
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number19
DOIs
StatePublished - 10 May 2004

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