High performance polycrystalline silicon TFTs by heat-retaining enhanced crystallization for SOP and AMOLED applications

Hsing Hua Wu*, Po-Tsun Liu, Huang Sung Yu, Ting Chang Chang, Jia Xing Lin, Hung Tse Chen, Shun Fa Huang, Yu G. Chen, Chi Lin Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

For the purpose of a reliable driving back-plane in AMOLED application, the Heat Retaining Enhanced Crystallization (HREC) technology is developed. A heat-retaining capping layer is applied in order to effectually slow down the heat dissipation and to retain the duration of melt, hence an enlarged poly-si grain lateral growth is obtained. With single-shot laser irradiation, a 7um-well location-controlled-n ploy Si active layer is obtained, exhibiting a high mobility (uFE=260cm2/Vsec) for the proposed dual-gate TFT device.

Original languageEnglish
Pages (from-to)246-249
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume37
Issue number1
DOIs
StatePublished - 1 Jan 2006
Event44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States
Duration: 4 Jun 20069 Jun 2006

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