For the purpose of a reliable driving back-plane in AMOLED application, the Heat Retaining Enhanced Crystallization (HREC) technology is developed. A heat-retaining capping layer is applied in order to effectually slow down the heat dissipation and to retain the duration of melt, hence an enlarged poly-si grain lateral growth is obtained. With single-shot laser irradiation, a 7um-well location-controlled-n ploy Si active layer is obtained, exhibiting a high mobility (uFE=260cm2/Vsec) for the proposed dual-gate TFT device.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 1 Jan 2006|
|Event||44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States|
Duration: 4 Jun 2006 → 9 Jun 2006