High-performance polycrystalline-silicon TFT by heat-retaining enhanced lateral crystallization

Po-Tsun Liu*, Hsing Hua Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

High-performance low-temperature polycrystalline-silicon thin-film transistors (TFTs) have been fabricated by heat-retaining enhanced crystallization (H-REC). In the H-REC technology, a heat-retaining capping layer (HRL) is applied on the prepattern amorphous silicon islands to slow down the heat dissipation effectively. It thereby retains long duration of melting process and further enhances poly-Si-grain lateral growth. With a single shot of laser irradiation, the location-controllable poly-Si active layer with 7-μm length of grain size can be formed successfully. In addition, in this letter, the H-REC poly-Si TFT with dual gates is studied to enhanced electrical performance and stability.

Original languageEnglish
Pages (from-to)722-724
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number8
DOIs
StatePublished - 1 Aug 2007

Keywords

  • Excimer laser crystallization (ELC)
  • Heat-retaining enhanced crystallization (H-REC)
  • Thin-film transistor (TFT)

Fingerprint Dive into the research topics of 'High-performance polycrystalline-silicon TFT by heat-retaining enhanced lateral crystallization'. Together they form a unique fingerprint.

Cite this