High-performance poly-silicon TFTs using HfO2 gate dielectric

Chia Pin Lin*, Bing-Yue Tsui, Ming Jui Yang, Ruei Hao Huang, Chao-Hsin Chien

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

71 Scopus citations


High-performance low-temperature poly-Si thin-film transistors (TFTs) using high-k (HfO2) gate dielectric is demonstrated for the first time. Because of the high gate capacitance density and thin equivalent-oxide thickness contributed by the high-k gate dielectric, excellent device performance can be achieved including high driving current, low subthreshold swing, low threshold voltage, and high ON/OFF current ratio. It should be noted that the ON-state current of high-k gate-dielectric TFTs is almost five times higher than that of SiO2 gate-dielectric TFTs. Moreover, superior threshold-voltage (Vth) rolloff property is also demonstrated. All of these results suggest that high-k gate dielectric is a good choice for high-performance TFTs.

Original languageEnglish
Pages (from-to)360-363
Number of pages4
JournalIEEE Electron Device Letters
Issue number5
StatePublished - 1 May 2006


  • Hafnium dioxide (HfO)
  • High dielectric-constant dielectric
  • Thin-film transistors (TFTs)

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