For the first time, we construct poly-Si thin-film transistors (TFTs) with novel L-shaped poly-Si fin channels (poly-Si TFTs with L-fin channels, called LFin-TFTs). The L-fin channels of LFin-TFTs are similar to the multiple-gated fin channels of FinFETs. The LFin-TFTs exhibit a low supply gate voltage (3 V), a good subthreshold swing (SS) ∼190 mV/dec, and a high on/off current ratio (I ON /I OFF ) < 10 6 (V D = 1 V) without hydrogen-related plasma treatments. After Ni salicidation, the devices exhibit steep SS ∼ 148 mV/dec and I ON /I OFF ∼ 10 7 . After NH 3 plasma treatment, the characteristics of the devices are further improved. The LFin-TFTs have steeper SS ∼ 132 mV/dec, higher I ON / IOFF > 10 7 , and threshold voltage (V TH ) ∼ 0.036 V.
- multiple gate
- NH plasma
- Ni salicidation
- poly-Si thin-film transistors (TFTs)