High-performance poly-si thin-film transistors with L-fin channels

Yi Hsien Lu*, Po Yi Kuo, Je Wei Lin, Yi Hong Wu, Yi Hsuan Chen, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

For the first time, we construct poly-Si thin-film transistors (TFTs) with novel L-shaped poly-Si fin channels (poly-Si TFTs with L-fin channels, called LFin-TFTs). The L-fin channels of LFin-TFTs are similar to the multiple-gated fin channels of FinFETs. The LFin-TFTs exhibit a low supply gate voltage (3 V), a good subthreshold swing (SS) ∼190 mV/dec, and a high on/off current ratio (I ON /I OFF ) < 10 6 (V D = 1 V) without hydrogen-related plasma treatments. After Ni salicidation, the devices exhibit steep SS ∼ 148 mV/dec and I ON /I OFF ∼ 10 7 . After NH 3 plasma treatment, the characteristics of the devices are further improved. The LFin-TFTs have steeper SS ∼ 132 mV/dec, higher I ON / IOFF > 10 7 , and threshold voltage (V TH ) ∼ 0.036 V.

Original languageEnglish
Article number6095584
Pages (from-to)215-217
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number2
DOIs
StatePublished - 1 Feb 2012

Keywords

  • FinFETs
  • L-fin
  • multiple gate
  • NH plasma
  • Ni salicidation
  • poly-Si thin-film transistors (TFTs)

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