High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure

Po Yi Kuo*, Tien-Sheng Chao, Ren Jie Wang, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

In this letter, fully Ni self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate polycrystalline silicon thin-film transistors (FSA-TFTs) have been successfully fabricated on a 40-nm-thick channel layer. Experimental results show that the FSA-TFTs give increased ON/OFF current ratio, improved subthreshold characteristics, less threshold voltage rolloff, and larger field-effect mobility compared with conventional TFTs. The FSA-TFTs exhibit small S/D and gate parasitic resistance and effectively suppress the floating-body effect and parasitic bipolar junction transistor action. The characteristics of the FSA-TFTs are suitable for high-performance driving TFTs with good output characteristics and large breakdown voltage.

Original languageEnglish
Pages (from-to)258-261
Number of pages4
JournalIEEE Electron Device Letters
Volume27
Issue number4
DOIs
StatePublished - 1 Apr 2006

Keywords

  • Floating-body effect
  • Fully salicided
  • Parasitic bipolar junction transistor
  • Polycrystalline silicon thin-film transistors (poly-Si TFTs)

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