High performance poly-Si TFTs fabricated by continuous-wave laser annealing of metal-induced lateral crystallised silicon films

C. P. Chang*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

In this process, amorphous silicon was first transformed to polycrystalline silicon (poly-Si) using a metal-induced lateral crystallisation (MILC) process, followed by annealing with a continuous-wave laser lateral (λ∼532nm) crystallisation (CLC) with an output power of 3.8W. MILC-CLC-TFT performed far superior to MILC-TFT. The mobility of the MILC-CLC-TFT was 293cm2/Vs, which was much higher than that of MILC TFTs (54.8cm2/Vs). In addition, MILC-CLC TFTs showed better device uniformity and reliability.

Original languageEnglish
Pages (from-to)1157-1158
Number of pages2
JournalElectronics Letters
Volume44
Issue number19
DOIs
StatePublished - 17 Sep 2008

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