High-performance poly-si nanowire thin-film transistors using HfO 2 gate dielectric

Chen Ming Lee*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

High-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) using hafnium dioxide HfO2 as gate dielectric is successfully fabricated for the first time. The excellent short-channel characteristics are attributed to the high- κ gate dielectric, ultrathin poly-Si NW channel thickness, and omega-shaped gate structure. The record high driving capability of 549 μAm results from the ultrashort gate length LG, thin equivalent oxide thickness, and Ni silicide metal source/drain. This letter reveals the opportunity of high-performance poly-Si TFT circuits for system-on-panel and 3-D integrated circuit (3-D IC) applications.

Original languageEnglish
Article number5680577
Pages (from-to)327-329
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number3
DOIs
StatePublished - 1 Mar 2011

Keywords

  • High-dielectric-constant dielectric
  • nanowire (NW)
  • polycrystalline silicon (poly-Si)
  • thin-film transistor (TFT)

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