High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films

Chan Yu Liao, Ching Yu Huang, Ming Hui Huang, Wen Hsien Huang, Chang Hong Shen, Jia Min Shieh, Huang-Chung Cheng

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Abstract

High-performance polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) fabricated with lightly doped Ge thin films by excimer laser crystallization (ELC) and counter doping (CD) have been demonstrated. High-quality n-type Ge thin films with a grain size as large as 1 μm were fabricated by ELC in the super lateral-growth regime and CD at a dose of 1 ' 1013cm%2 or higher. Consequently, a superior field-effect mobility of 271cm2V%1 s%1 and a high on/off current ratio of 2.7 ' 103 have been obtained for p-channel Ge TFTs with the channel width and length of both 0.5μm fabricated by ELC at 300mJ/cm2 and CD at a dose of 1 ' 1013cm%2. The effects of ELC conditions and CD dose on the electrical characteristics of p-channel Ge TFTs were also investigated.

Original languageEnglish
Article number06GF08
JournalJapanese Journal of Applied Physics
Volume56
Issue number6
DOIs
StatePublished - 1 Jun 2017

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