In this work, PtSi which has low valence-band barrier height is employed as the source/drain (S/D) material in p-channel Schottky barrier poly-Si thin-film transistors (SBTFTs) with field-induced drain (FID). This results in 5 times improvement in device's on-current as compared to the counterpart with CoSi 2 S/D. In the meantime, the inherent high off-state leakage current observed in conventional SBTFTs is successfully suppressed by the implementation of electrical junctions induced by a sub-gate, further improving the on/off current ratio.
|Number of pages||5|
|State||Published - 19 Dec 2005|
|Event||Thin Film Transistor Technologies VII - Proceedings of the International Symposium - Honolulu, HI, United States|
Duration: 4 Oct 2004 → 6 Oct 2004
|Conference||Thin Film Transistor Technologies VII - Proceedings of the International Symposium|
|Period||4/10/04 → 6/10/04|