High performance P-channel schottky barrier thin-film transistors with PtSi source/drain

Ming Hsien Lee, Tiao Yuan Huang, Kuan Lin Yeh, Horng-Chih Lin*

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

In this work, PtSi which has low valence-band barrier height is employed as the source/drain (S/D) material in p-channel Schottky barrier poly-Si thin-film transistors (SBTFTs) with field-induced drain (FID). This results in 5 times improvement in device's on-current as compared to the counterpart with CoSi 2 S/D. In the meantime, the inherent high off-state leakage current observed in conventional SBTFTs is successfully suppressed by the implementation of electrical junctions induced by a sub-gate, further improving the on/off current ratio.

Original languageEnglish
Pages99-103
Number of pages5
StatePublished - 19 Dec 2005
EventThin Film Transistor Technologies VII - Proceedings of the International Symposium - Honolulu, HI, United States
Duration: 4 Oct 20046 Oct 2004

Conference

ConferenceThin Film Transistor Technologies VII - Proceedings of the International Symposium
CountryUnited States
CityHonolulu, HI
Period4/10/046/10/04

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    Lee, M. H., Huang, T. Y., Yeh, K. L., & Lin, H-C. (2005). High performance P-channel schottky barrier thin-film transistors with PtSi source/drain. 99-103. Paper presented at Thin Film Transistor Technologies VII - Proceedings of the International Symposium, Honolulu, HI, United States.