High-performance p-channel LTPS-TFT using HfO2 gate dielectric and nitrogen ion implantation

Ming Wen Ma*, Tsung Yu Chiang, Tien-Sheng Chao, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


In this communication, a high-performance p-channel low-temperature poly-Si thin-film transistor with HfO2 gate dielectric and nitrogen ion implantation is demonstrated for the first time. A low threshold voltage V TH = -0.8 V, excellent subthreshold swing S.S. = 0.123 V/decade, high field effect mobility μFE = 64.14 cm2 V-1 s-1 and high driving current IDsat = 9.14 νA νm -1 @ 3 V operation voltage of the p-channel LTPS-TFT can be achieved. The high performance characteristics are attributed to the very low effective oxide thickness EOT = 8.4 nm provided by the HfO2 gate dielectric and the passivation of effective interface states and grain boundary traps by the nitrogen ion implantation treatment. It would be very suitable for the application of a high-speed and low-power pixel-driving device in flat-panel displays.

Original languageEnglish
Article number072001
JournalSemiconductor Science and Technology
Issue number7
StatePublished - 21 Aug 2009

Fingerprint Dive into the research topics of 'High-performance p-channel LTPS-TFT using HfO<sub>2</sub> gate dielectric and nitrogen ion implantation'. Together they form a unique fingerprint.

Cite this