High-performance normally-OFF GaN MIS-HEMTs using hybrid ferroelectric charge trap gate stack (FEG-HEMT) for power device applications

Chia Hsun Wu, Ping Cheng Han, Shih Chien Liu, Ting En Hsieh, Franky Juanda Lumbantoruan, Yu Hsuan Ho, Jian You Chen, Kun Sheng Yang, Huan Chung Wang, Yen Ku Lin, Po Chun Chang, Quang Ho Luc, Yueh Chin Lin, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (Vth) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better Vth stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high Vth of +2.71 V at I DS = 1 μ Amm, a high maximum current density of 820 mA/mm and low on-resistance ( R ON ) of 11.1 Ω mm. The FE device also shows good Vth -temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application.

Original languageEnglish
Pages (from-to)991-994
Number of pages4
JournalIEEE Electron Device Letters
Issue number7
StatePublished - 1 Jul 2018


  • AlGaN/GaN
  • charge trap gate stack
  • enhancement-mode
  • ferroelectric materials
  • metal-insulator-semiconductor (MIS)-HEMT
  • normally-OFF

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