High performance non-alloyed pseudomorphic high electron mobility transistors

C. K. Peng*, W. H. Lan, S. L. Tu, S. J. Yang, S. S. Chen, Chien-Cheng Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations


We have studied the InAs/GaAs strained layer superlattice (SLS) structures as non-alloyed contacts applied to pseudomorphic high electron mobility transistors (PHEMTs) grown by the molecular beam epitaxy (MBE) system. Transmission line measurements with four point configurations showed that specific contact resistances between 6.6 × 10-7 and 2.6 × 10-6 Ω cm2 were obtained for the as-grown devices, with a linear correlation coefficient of 0.997. D.c. measurements of the as-grown PHEMT with 1 μm gate showed a transconductance of 240 mS mm-1. Microwave measurements on the same device showed a cut-off frequency of 19 GHz and a maximum power gain frequency of 42 GHz. These results are comparable with those of devices with the conventional contact scheme. Meanwhile, since the non-alloying process maintains excellent surface morphology and sharp metal pad edges, AuGeNi type metals can be used in small dimension devices. In contrast, the conventionally alloyed devices showed rough surface morphology and zigzag edges, which may affect device processing and limit the usefulness of AuGeNi metal as the ohmic contact in small dimension devices.

Original languageEnglish
Pages (from-to)92-96
Number of pages5
JournalMaterials Chemistry and Physics
Issue number1
StatePublished - 1 Jan 1996


  • Non-alloyed contacts
  • Strained layer superlattice
  • Surface morphology

Fingerprint Dive into the research topics of 'High performance non-alloyed pseudomorphic high electron mobility transistors'. Together they form a unique fingerprint.

  • Cite this