High-performance Ni/SiO 2 /Si programmable metallization cell

Kuan Liang Lin*, Yi Ming Tseng, Jun Hung Lin, Jiann Shieh, Yao Jen Lee, Tuo-Hung Hou, Tan Fu Lei

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Resistive switching in Ni/SiO 2 /Si programmable metallization cells was investigated. The proposed switching mechanism is the formation and dissolution of Ni filaments. Under positive bias, Ni cations migrate through SiO 2 and are reduced at the cathode forming filaments. The filaments are dissolved by Joule-heating effect under positive or negative voltages. Promising resistive-switching characteristics, such as a large resistance ratio of ∼400, excellent data retention, and good immunity to read disturbance, are also revealed.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 26 Sep 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • Joule-heating effect
  • Ni filament
  • programmable metallization cell
  • resistive switching
  • SiO2

Fingerprint Dive into the research topics of 'High-performance Ni/SiO <sub>2</sub> /Si programmable metallization cell'. Together they form a unique fingerprint.

Cite this