High performance multi-bit nonvolatile HfO2 nanocrystal memory using spinodal phase separation of hafnium silicate

Yu Hsien Lin*, Chao-Hsin Chien, Ching Tzung Lin, Ching Wei Chen, Chun Yen Chang, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalConference article

17 Scopus citations


In this paper, we exploit a novel technique for preparing high density HfO2 nanocrystals with an average size < 10nm using spinodal phase separation of Hf-silicate thin film by 900°C rapid thermal annealing for nonvolatile memories. The density can be as high as 0.9-1.9times;10 12cm-2. Owing to the fact that HfO2 nanocrystals are well embedded inside SiO2 matrix and their sufficiently deep energy level, we, for the first time, have demonstrated superior characteristics of the nanocrystal memory in terms of considerably large memory window, high speed program/erase (1μs/0.1ms), long retention time greater than 108s for 10% charge loss, excellent endurance after 106 P/E cycles, negligible read/write disturbances and multi-bit operation.

Original languageEnglish
Pages (from-to)1080-1082
Number of pages3
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - 1 Dec 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 13 Dec 200415 Dec 2004

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