High-Performance MOCVD-Grown AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base

Guan Wu Wang, R. L. Pierson, Peter M. Asbeck, Keh Chung Wang, Nan Lei Wang, R. Nubling, Mau-Chung Chang, Jack Salerno, S. Sastry

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34 Scopus citations

Abstract

We report excellent microwave performance demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs HBT's with carbon-doped base. These devices achieve an ftof 76 GHz and an fmaxof 102 GHz. By varying device structures, current gain reaches over 300 in structures with a base doping of 2 × 1019cm-3. A static divide-by-4 divider implemented with C-doped base HBT's has been operated up to a frequency of 20.4 GHz. These results indicate the suitability of carbon doping for high-performance HBT's.

Original languageEnglish
Pages (from-to)347-349
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number6
DOIs
StatePublished - 1 Jan 1991

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    Wang, G. W., Pierson, R. L., Asbeck, P. M., Wang, K. C., Wang, N. L., Nubling, R., Chang, M-C., Salerno, J., & Sastry, S. (1991). High-Performance MOCVD-Grown AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base. IEEE Electron Device Letters, 12(6), 347-349. https://doi.org/10.1109/55.82083