High-performance MIM capacitors using a high- κ TiZrO dielectric

C. H. Cheng, H. C. Pan, S. H. Lin, H. H. Hsu, C. N. Hsiao, C. P. Chou, F. S. Yeh, Albert Chin

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10- 8 A cm 2 at -1 V was obtained for a 18 fFμ m 2 capacitance density. For a 5.5 fFμ m 2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume155
Issue number12
DOIs
StatePublished - 5 Nov 2008

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