High performance MIM capacitor for RF BiCMOS/CMOS LSIs

Takashi Yoshitomi*, Yasuo Ebuchi, Hideki Kimijima, Tatsuya Ohguro, Eiji Morifuji, Hisayo Sasaki Momose, Kunihiro Kasai, Kazunari Ishimaru, Fumitomo Matsuoka, Yasuhiro Katsumata, Masaaki Kinugawa, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

15 Scopus citations

Abstract

By using a newly proposed structure of the multi-via MIM capacitor, amorphous Ta2O5 films were investigated. Amorphous Ta2O5 with our proposed structure is one of the suitable combinations for the capacitors for RF analog applications.

Original languageEnglish
Pages133-136
Number of pages4
StatePublished - 1999
EventProceedings of the 1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999) - Minneapolis, MN, USA
Duration: 26 Sep 199928 Sep 1999

Conference

ConferenceProceedings of the 1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999)
CityMinneapolis, MN, USA
Period26/09/9928/09/99

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