We propose and demonstrate a new VLSI structure using high performance metal-gate/high-κ MOSFETs and high-Q RF passive devices on Ge-on- Insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation, the metal-gate/(La)AlO 3/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction, high-κ crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500°C RTA.
|Number of pages||4|
|State||Published - 1 Dec 2004|
|Event||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China|
Duration: 18 Oct 2004 → 21 Oct 2004
|Conference||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004|
|Period||18/10/04 → 21/10/04|