High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology

Albert Chin*, H. L. Kao, D. S. Yu, C. C. Liao, C. Zhu, M. F. Li, Shiyang Zhu, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

We propose and demonstrate a new VLSI structure using high performance metal-gate/high-κ MOSFETs and high-Q RF passive devices on Ge-on- Insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation, the metal-gate/(La)AlO 3/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction, high-κ crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500°C RTA.

Original languageEnglish
Pages302-305
Number of pages4
StatePublished - 1 Dec 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 18 Oct 200421 Oct 2004

Conference

Conference2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period18/10/0421/10/04

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