High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure

Ching Wei Lin*, Li Jing Cheng, Yin Ng Lu, Yih Shing Lee, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

High-performance low-temperature poly-Si (LTPS) thin-film transistors (TFTs) have been fabricated by excimer laser crystallization (ELC) with recessed-channel (RC) structure. The TFTs made by this method possessed large longitudinal grains in the channel regions, therefore, they exhibited better electrical characteristics as compared with the conventional ones. The average field-effect mobility above 300 cm2/V-s and on/off current ratio higher than 109 were achieved in these RC-structure devices. In addition, since grain growth could be artificially controlled by this method, the device electrical characteristics were less sensitive to laser energy density variation, and therefore the uniformity of device performance could be improved.

Original languageEnglish
Pages (from-to)269-271
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number6
DOIs
StatePublished - 1 Jun 2001

Keywords

  • Excimer laser crystallization (ELC)
  • Recessed-channel (RC)
  • Thin-film transistor (TFT)

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