High-performance low-temperature p-channel polycrystalline-germanium thin-film transistors via continuous wave laser crystallization

Chun Yi Wu, Yi Shao Li, Chia Hsin Chou, Huang-Chung Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The continuous wave laser crystallization (CLC) has been considered as a suitable approach to achieve the high-quality Ge films. In order to further overcome the hole concentration of Ge thin films resulting from the acceptor-like defects, the counter-doping (CD) process with a suitable dose of n-type dopants was employed to convert the carrier type in Ge thin films. In this study, the high-performance low-temperature p-channel polycrystalline-germanium thin-film transistors (TFTs) have been demonstrated via continuous wave laser crystallization and counter doping to exhibit the low subthreshold swing of 432 mV/decade, a superior on/off current ratio of 4×103 and a high hole field-effect mobility of 290 cm2/V-s.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages119-122
Number of pages4
ISBN (Electronic)9784990875312
DOIs
StatePublished - 15 Aug 2016
Event23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan
Duration: 6 Jul 20168 Jul 2016

Publication series

NameProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
CountryJapan
CityKyoto
Period6/07/168/07/16

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    Wu, C. Y., Li, Y. S., Chou, C. H., & Cheng, H-C. (2016). High-performance low-temperature p-channel polycrystalline-germanium thin-film transistors via continuous wave laser crystallization. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 119-122). [7543639] (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2016.7543639