High-Performance Low-Base-Collector Capacitance AlGaAs/GaAs Heterojunction Bipolar Transistors Fabricated by Deep Ion Implantation

M. C. Ho, R. A. Johnson, P. M. Asbeck, W. J. Ho, Mau-Chung Chang

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Low-base-collector capacitance (Cbc) AlGaAs/GaAs HBT's with fMAX > 200 GHz and fx = 52 GHz have been fabricated. With co-implants of high energy, high dose He+ and H+ ions through the external base layer, part of the heavily doped n+sub-collector was compensated leading to a decrease in the extrinsic portion of Cbc. The implants caused only a slight increase of base resistance. Using this approach in combination with a standard low dose, shallow collector compensating implant, Cbc of double implanted HBT's can be reduced by more than 35%.

Original languageEnglish
Pages (from-to)512-514
Number of pages3
JournalIEEE Electron Device Letters
Volume16
Issue number11
DOIs
StatePublished - 1 Jan 1995

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