SOI technology provides several unique advantages for integrating deep-sub-micron CMOS and lateral bipolar technologies, and high performance Complementary BiCMOS process has been demonstrated. However, even though the inherent bipolar action between the drain and source junctions of a MOSFET in SOI CMOS technology allows the formation of Lateral Bipolar Transistors with minimal effort, base definition and base contact are usually very difficult. In this paper, a new bipolar device structure fabricated using a SOI CMOS process is studied. The new base contact scheme is scalable with channel width, thus giving higher performance compared with the side base contact scheme.
|Number of pages||2|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 IEEE International SOI Conference - Tucson, AZ, USA|
Duration: 3 Oct 1995 → 5 Oct 1995
|Conference||Proceedings of the 1995 IEEE International SOI Conference|
|City||Tucson, AZ, USA|
|Period||3/10/95 → 5/10/95|