In0.53Ga0.47As FinFETs are fabricated on 300 mm Si substrate. High device performance with good uniformity across the wafer are demonstrated (SS=78 mV/dec., Ion/Ioff∼105, DIBL=48 mV/V, gm=1510 μS/μm, and Ion=301 μA/μm at Vds=0.5V with Lg=120 nm device). The extrinsic field effect mobility of 1731 cm2/V-s with EOT∼0.9nm is extracted by split-CV. Devices fabricated on 300mm Si have shown similar performances in SS and Ion when benchmarked with device fabricated on lattice-matched InP substrate. In addition, an Ion of 44.1 μA per fin is observed on the fin-height of 70 nm and the fin-width of 25nm, which is among the highest values reported for In0.53Ga0.47As FinFETs to the best of our knowledge.