High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate

M. L. Huang, S. W. Chang, M. K. Chen, Y. Oniki, H. C. Chen, C. H. Lin, W. C. Lee, Chun-Hsiung Lin, M. A. Khaderbad, K. Y. Lee, Z. C. Chen, P. Y. Tsai, L. T. Lin, M. H. Tsai, C. L. Hung, T. C. Huang, Y. C. Lin, Y. C. Yeo, S. M. Jang, H. Y. HwangHoward C.H. Wang, Carlos H. Diaz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

17 Scopus citations

Abstract

In0.53Ga0.47As FinFETs are fabricated on 300 mm Si substrate. High device performance with good uniformity across the wafer are demonstrated (SS=78 mV/dec., Ion/Ioff∼105, DIBL=48 mV/V, gm=1510 μS/μm, and Ion=301 μA/μm at Vds=0.5V with Lg=120 nm device). The extrinsic field effect mobility of 1731 cm2/V-s with EOT∼0.9nm is extracted by split-CV. Devices fabricated on 300mm Si have shown similar performances in SS and Ion when benchmarked with device fabricated on lattice-matched InP substrate. In addition, an Ion of 44.1 μA per fin is observed on the fin-height of 70 nm and the fin-width of 25nm, which is among the highest values reported for In0.53Ga0.47As FinFETs to the best of our knowledge.

Original languageEnglish
Title of host publication2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006373
DOIs
StatePublished - 21 Sep 2016
Event36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, United States
Duration: 13 Jun 201616 Jun 2016

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2016-September
ISSN (Print)0743-1562

Conference

Conference36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
CountryUnited States
CityHonolulu
Period13/06/1616/06/16

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