High-performance in0.52Al0.48AS/In 0.6Ga0.4as power metamorphic HEMT for Ka-band applications

Chia Yuan Chang*, Edward Yi Chang, Yi Chung Lien, Yasuyuki Miyamoto, Szu Hung Chen, Li Hsin Chu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 70-nm In0.52Al0.48As/In0.6Ga 0.4As power MHEMT with double δ-doping was fabricated and evaluated. The device has a high transconductance of 827 mS/mm. The saturated drain-source current of the device is 890 mA/mm. A current gain cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (f max) of 300 GHz were achieved due to the nanometer gate length and the high Indium content in the channel. When measured at 32 GHz, the 4 × 40 pm device demonstrates a maximum output power of 14.5 dBm with P1dB of 11.1 dBm and the power gain is 9.5 dB. The excellent DC and RF performance of the 70-nm MHEMT shows a great potential for Ka-band power applications.

Original languageEnglish
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages422-424
Number of pages3
DOIs
StatePublished - 1 Dec 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: 29 Nov 20061 Dec 2006

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period29/11/061/12/06

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    Chang, C. Y., Chang, E. Y., Lien, Y. C., Miyamoto, Y., Chen, S. H., & Chu, L. H. (2006). High-performance in0.52Al0.48AS/In 0.6Ga0.4as power metamorphic HEMT for Ka-band applications. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 422-424). [4266645] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2006.381095