In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low VT of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm 2V.s, and large IonIoff ratio of 5 × 107. These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.
- Amorphous indium-gallium-zinc oxide (a-IGZO)
- Equivalent oxide thickness
- Thin-film transistors