High-performance ingazno thin-film transistors using HfLaO gate dielectric

N. C. Su, S. J. Wang, Albert Chin

Research output: Contribution to journalArticlepeer-review

75 Scopus citations


In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low VT of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm 2V.s, and large IonIoff ratio of 5 × 107. These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.

Original languageEnglish
Article number5313883
Pages (from-to)1317-1319
Number of pages3
JournalIEEE Electron Device Letters
Issue number12
StatePublished - 1 Dec 2009


  • Amorphous indium-gallium-zinc oxide (a-IGZO)
  • Equivalent oxide thickness
  • HfLaO
  • High-k
  • Thin-film transistors

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