High-performance ingazno thin-film transistors using HfLaO gate dielectric

N. C. Su; S. J. Wang; Albert Chin

doi:10.1109/LED.2009.2033392

High-performance ingazno thin-film transistors using HfLaO gate dielectric

N. C. Su, S. J. Wang, Albert Chin

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low V_T of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm ²V.s, and large I_onI_off ratio of 5 × 10⁷. These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.

Original language	English
Article number	5313883
Pages (from-to)	1317-1319
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	12
DOIs	https://doi.org/10.1109/LED.2009.2033392
State	Published - 1 Dec 2009

Keywords

Amorphous indium-gallium-zinc oxide (a-IGZO)
Equivalent oxide thickness
HfLaO
High-k
Thin-film transistors

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10.1109/LED.2009.2033392

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title = "High-performance ingazno thin-film transistors using HfLaO gate dielectric",

abstract = "In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low VT of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm 2V.s, and large IonIoff ratio of 5 × 107. These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.",

keywords = "Amorphous indium-gallium-zinc oxide (a-IGZO), Equivalent oxide thickness, HfLaO, High-k, Thin-film transistors",

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AU - Wang, S. J.

AU - Chin, Albert

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N2 - In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low VT of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm 2V.s, and large IonIoff ratio of 5 × 107. These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.

AB - In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low VT of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm 2V.s, and large IonIoff ratio of 5 × 107. These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.

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