High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes

Hung Chi Wu*, Chao-Hsin Chien

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

This work demonstrates In-Ga-Zn-O (IGZO) as source and drain electrodes in IGZO-thin film transistors (TFTs). The fabricated TFT depicts excellent electrical properties; its mobility is 18.02 (cm2/V s), threshold voltage (Vth) is 0.3 (V), on/off ratio is 1.63 × 108 and subthreshold swing (S.S.) is 239 (mV/decade). We find using rapid thermal annealing treatment can convert IGZO into an effective conductor, and the transparency of IGZO remained almost unchanged. We also find sufficient thermal budget is needed for getting stable transfer curve and output characteristic; otherwise, current fluctuation in on-state can be easily observed. With IGZO electrodes, fully transparent IGZO-TFTs can be thus realized on a glass substrate.

Original languageEnglish
Article number062103
JournalApplied Physics Letters
Volume102
Issue number6
DOIs
StatePublished - 11 Feb 2013

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