High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer

An Jye Tzou, Da Wei Lin, Chien Rong Yu, Zhen Yu Li, Yu Kuang Liao, Bing Cheng Lin, Jhih Kai Huang, Chien-Chung Lin, Tsung-Sheng Kao, Hao-Chung Kuo, Chun Yen Chang

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

In this study, high-performance InGaN-based green light-emitting diodes (LEDs) with a quaternary InAlGaN/GaN superlattice electron blocking layer (QSL-EBL) have been demonstrated. The band structural simulation was employed to investigate the electrostatic field and carriers distribution, show that the efficiency and droop behavior can be intensively improved by using a QSL-EBL in LEDs. The QSL-EBL structure can reduce the polarization-related electrostatic fields in the multiple quantum wells (MQWs), leading to a smoother band diagram and a more uniform carriers distribution among the quantum wells under forward bias. In comparison with green LEDs with conventional bulk-EBL structure, the light output power of LEDs with QSL-EBL was greatly enhanced by 53%. The efficiency droop shows only 30% at 100 A/cm2 comparing to its peak value, suggesting that the QSL-EBL LED is promising for future white lighting with high performance.

Original languageEnglish
Pages (from-to)11387-11395
Number of pages9
JournalOptics Express
Volume24
Issue number11
DOIs
StatePublished - 30 May 2016

Fingerprint Dive into the research topics of 'High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer'. Together they form a unique fingerprint.

Cite this