High-performance HfO2/ZrO2/IGZO thin-film transistors deposited using atmospheric pressure plasma jet

Chien Hung Wu, Kow-Ming Chang, Hsin Yu Hsu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

An atmospheric pressure plasma jet (APPJ) deposition technology that is employed for the preparation of transparent oxide semiconductors film using an eco-friendly water-based metal salt solution as a precursor is presented. Through the use of APPJ indium-gallium-zinc-oxide (IGZO) film as the channel material and a high-k dielectric HfO2/ZrO2 gate stack, IGZO-based transparent thin-film transistors (TFTs) were fabricated and characterised. The HfO2/ZrO2/IGZO-TFTs by APPJ demonstrated excellent electrical characteristics, including a low Vth of 0.63 V, a small subthreshold swing of 0.37 V/dec, a high mobility of 40 cm2/V-s and a large Ion/Ioff ratio of 7 × 108.

Original languageEnglish
Pages (from-to)1747-1749
Number of pages3
JournalElectronics Letters
Volume50
Issue number23
DOIs
StatePublished - 6 Nov 2014

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