High-performance GaN MOSHEMTs fabricated with ALD Al2O3 dielectric and NBE gate recess technology for high frequency power applications

Yen Ku Lin, Shuichi Noda, Chia Ching Huang, Hsiao Chieh Lo, Chia Hsun Wu, Quang Ho Luc, Po Chun Chang, Heng-Tung Hsu, Seiji Samukawa, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

High-performance GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) using Al2O3 gate dielectric deposited by atomic layer deposition (ALD) and damage-free neutral beam etch (NBE) gate recess process for millimeter-wave power applications are demonstrated. The high-quality ALD Al2O3 reduces the gate leakage current of the device and the NBE method eliminates the plasmainduced defects in the nitride materials. The MOSHEMT device fabricated exhibits a high maximum drain current density (IDS,max) of 1.65 A/mm and a high peak extrinsic transconductance (gm.ext) of 653 mS/mm. The MOSHEMT device also demonstrates excellent RF performances, including fT/fMAX = 183/191 GHz, NFmin = 2.56 dB with GAS = 5.61 dB at 54 GHz, and an output power density of 2.7 W/mm associated with a power-added efficiency of 20.9% and a linear power gain of 9.4 dB at 38 GHz. To the best of our knowledge, the noise performance at 54 GHz is the best reported so far for the AlGaN/GaN HEMTs.

Original languageEnglish
Article number7906539
Pages (from-to)771-774
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number6
DOIs
StatePublished - 1 Jun 2017

Keywords

  • ALD
  • dry etching
  • GaN
  • gate recess
  • HEMT
  • low noise
  • neutral beam
  • power amplifier

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